| 摘要 |
The present invention is drawn to a method and a system for creating a one time programmable anti-fuse element. No amorphous silicon is used as in the prior art approach. Rather, a side wall spacer etch blocking mask is used to form a poly diode as the one time programmable anti-fuse element. In particular, in creating the one time programmable anti-fuse element, the present invention uses steps from existing standard process flow typically used for fabricating a standard semiconductor device such as a transistor. As such, these steps can be performed concurrently with the process flow of a standard semiconductor device. Thus, advantageously, the present invention does not perturb the existing process flow in creating the poly diode as the one time programmable anti-fuse element. Moreover, a forward biased current can be driven through the poly diode to destroy ("blow") it as the one time programmable anti-fuse element. As an added bonus, when compared to the blown prior art anti-fuse element, the blown anti-fuse element is harder to detect. Thus, advantageously, the anti-fuse element of the present invention is well suited for security applications.
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