| 摘要 |
<p>A method for manufacturing an excellent quality silicon mirror ware at low cost by heat-treating a silicon mirror wafer in a gas atmosphere of high safety to remedy grown-in crystal defects without specially selecting the type of the heat-treatment furnace, an excellent quality silicon mirror wafer, and a heat-treatment furnace preferably used for the manufacturing method are disclosed. The method comprises the steps of connecting the reaction tube in the heat-treating furnace to a supply line for supplying a nonoxidizable material gas through a connection part, supplying a nonoxidizable gas into the reaction tube through the supply line and connection part, and heat-treating the mirror-polished silicon wafer in the nonoxidizable gas atmosphere in the heat-treating furnace, wherein the content of impurities in the nonoxidizable gas in the reaction tube is less than 3 ppm.</p> |
