发明名称 Level shifter
摘要 <p>A compact level shifter is provided, which has a low consumption power and speedy operation, capable of easily performing a level conversion of voltage levels having a large difference. A voltage regulating circuit (10a), a P channel MOS electric field effect transistor (hereinafter referred to as PMOST), a PMOST (103), and an N channel MOS electric field effect transistor (hereinafter referred to as NMOST) (105) are connected in series between 2 power sources. Similarly, a voltage regulating circuit (10b), a PMOST (102), a PMOST (104), and an NMOST (106) are connected in series between 2 power sources. During the flow of a penetrating current in a transient period of a level conversion operation, a power source voltage is effectively reduced by the above-mentioned voltage regulating circuit, whereby the level conversion of the voltage level having a large difference is made easy.</p>
申请公布号 EP1134893(A2) 申请公布日期 2001.09.19
申请号 EP20010106247 申请日期 2001.03.14
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 AZAMI, MUNEHIRO
分类号 G02F1/133;H03K3/356;G09G3/20;G09G3/30;G09G3/36;H03K19/00;H03K19/0185;H04N5/66;(IPC1-7):H03K3/356;H03K19/018 主分类号 G02F1/133
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