发明名称 Process for etching an insulating layer and forming a semiconductor device
摘要 Many variations of etches for insulating layers (114, 400, 422, 426) can be used. In one set of embodiments, an insulating layer (114, 400, 422, 426) is etched using an oxide etching component, a fluorine-scavenging component, and an organic etching component. In another set of embodiments, the insulating layer (114, 400, 422, 426) includes at least one atomic weight percent of carbon or hydrogen. That insulating layer is etched using an oxide etching gas and a nitrogen-containing gas. In yet another set of embodiments, an insulating layer (114, 400, 422, 426) is formed over semiconductor device substrate (100) having a diameter of at least approximately 300 millimeters. The insulating layer (114, 400, 422, 426) is etched using an oxide etching gas and a nitrogen-containing gas. <IMAGE>
申请公布号 EP1085563(A3) 申请公布日期 2001.09.19
申请号 EP20000119753 申请日期 2000.09.11
申请人 MOTOROLA, INC. 发明人 RAJAGOPALAN, GANESH
分类号 H01L21/302;H01L21/3065;H01L21/311;H01L21/768;H01L23/522 主分类号 H01L21/302
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