| 摘要 |
A semiconductor device includes a bipolar transistor (14, 16) having at least a silicified surface layer of an emitter (42), a base (26) and a collector (22), and a MOS transistor (18, 20) including a gate electrode (40) having a silicified surface layer. The silicification of the diffused region of the bipolar transistor (14, 16) facilitates the manufacture of the semiconductor device having a reduced electric resistance. <IMAGE> |
