| 摘要 |
An exposure method and an exposure apparatus make it possible to highly accurately detect the relative positional relationship between a reticle and a projection optical system and perform the positional adjustment for the reticle and a wafer highly accurately. A plane mirror (17X), which serves as a movement mirror for measuring the position of the reticle (R), is installed on a side surface of a projection of a bottom surface of a finely movable stage (9) in a reticle stage (11). Accordingly, the plane mirror (17X) is arranged at a position lower than a movement plane (14a) for the reticle stage (11). A reference mirror (22X) is installed at an upper portion of a side surface of the projection optical system (5). A main laser interferometer body (21X) is used so that a measuring laser beam (LXM) is radiated onto the plane mirror (17X), and a reference laser beam (LXR) is radiated onto the reference mirror (22X). An interference light beam of the two laser beams (LXR, LXM) is photoelectrically detected to detect the position of the finely movable stage (9) (reticle (R)). When the reticle stage (11) is driven, a reticle frame (13) is moved to offset the driving reaction force. <IMAGE>
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