发明名称 |
Semiconductor device and method for fabricating the same |
摘要 |
A gate electrode and a gate insulating film are formed for each of PMOSFET, NMOSFET and ferroelectric FET. Source/drain regions are defined for the NMOSFET and ferroelectric FET and for the PMOSFET by performing ion implantation processes twice separately. An intermediate electrode connected to the gate electrode of the ferroelectric FET, a ferroelectric film and a control gate electrode are formed over a first interlevel dielectric film. An interconnect layer, which includes first and second interconnects and is connected to the gate electrodes of the CMOS device, is formed on a second interlevel dielectric film. The first and second interconnects are connected to the control gate and intermediate electrodes of the ferroelectric FET, respectively. <IMAGE> <IMAGE> |
申请公布号 |
EP1134803(A1) |
申请公布日期 |
2001.09.19 |
申请号 |
EP20010106156 |
申请日期 |
2001.03.13 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
SHIMADA, YASUHIRO;KATO, YOSHIHISA |
分类号 |
H01L21/336;H01L21/8246;H01L27/105;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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