发明名称 |
Method of fabricating semiconductor memory device |
摘要 |
A method of fabricating a semiconductor memory device comprises the steps of: (a) forming an interlayer insulating film on a semiconductor substrate, opening a contact hole in said interlayer insulating film, and burying a plug in said contact hole; (b) forming a first insulating film on said interlayer insulating film inclusive of said plug, and forming a trench in said first insulating film above said plug; (c) forming a first conductive film on said first insulating film inclusive of said trench, and etching back said first conductive film by a chemical mechanical polishing method to form a bottom electrode inside said trench; (d) forming a high dielectric film or a ferroelectric film and a second conductive film in this order on said first insulating film inclusive of said bottom electrode; and (e) patterning simultaneously said high dielectric film or ferroelectric film and said second conductive film to form a capacitor insulating film and a top electrode. <IMAGE> <IMAGE> <IMAGE> <IMAGE> <IMAGE> |
申请公布号 |
EP1017096(A3) |
申请公布日期 |
2001.09.19 |
申请号 |
EP19990310526 |
申请日期 |
1999.12.23 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
OHNISHI, SHIGEO;TAKENAKA, NOBUYUKI;IGUCHI, KATSUJI |
分类号 |
H01L21/302;H01L21/02;H01L21/3065;H01L21/768;H01L21/8242;H01L27/10;H01L27/108 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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