发明名称 |
Method of forming transistors with self aligned damascene gate contact |
摘要 |
A method of fabricating a transistor having shallow source and drain extensions utilizes a self-aligned contact. The drain extensions are provided through an opening between a contact area and the gate structure. A high-K gate dielectric material can be utilized. P-MOS and N-MOS transistors can be created according to the disclosed method.
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申请公布号 |
US6291278(B1) |
申请公布日期 |
2001.09.18 |
申请号 |
US19990303694 |
申请日期 |
1999.05.03 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
XIANG QI;BUYNOSKI MATTHEW S.;LIN MING-REN |
分类号 |
H01L21/285;H01L21/336;H01L21/60;H01L21/8238;(IPC1-7):H01L21/336;H01L21/823 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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