| 摘要 |
PURPOSE: A method for manufacturing a capacitor in a semiconductor device is provided to improve the uniformity of charge density and to prevent the damage of a storage electrode and a dielectric film by rounding edge portions of the storage electrode. CONSTITUTION: The first insulating layer(22) having a contact hole is formed on a semiconductor substrate(100). After forming the second insulating layer having a relatively low etch rate compared to the first insulating layer(22), a protrudent spacer(24) is formed at both sidewalls of the contact hole by over-etching the second insulating layer together with the first insulating layer. The first polysilicon layer(25) as a storage electrode and a sacrificial layer(26) are sequentially formed on the resultant structure. The second polysilicon layer(27) is formed to connect the first polysilicon layer(25). A pin-type storage electrode is formed by sequentially etching the second polysilicon layer, the sacrificial layer and the first polysilicon layer and removing the sacrificial layer. At this time, the edges of the pin-type storage electrode are rounded by the protrudent spacer(24).
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