| 摘要 |
A slurry and CMP process to polish a noble metal surface is provided. The slurry and polishing process are used to form a damascene, or dual damascene noble metal inlay. Such as inlay is useful is forming an integrated circuit ferroelectric capacitor electrode. The slurry includes a halogen, such as bromine, in a basic aqueous solution to chemically react with the noble metal. With an abrasive added, the slurry is used to polish and remove noble metals from a wafer surface during a CMP process.
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