| 发明名称 |
Insulating film for semiconductor device and semiconductor device |
| 摘要 |
A semiconductor device is provided with an interlayer insulating film consisting essentially of poly-alpha,alpha-difluoroparaxylylene. The interlayer insulating film can have a low relative dielectric constant of from 2.1 to 2.7.
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| 申请公布号 |
US6291072(B1) |
申请公布日期 |
2001.09.18 |
| 申请号 |
US19990228970 |
申请日期 |
1999.01.12 |
| 申请人 |
KISHIMOTO SANGYO CO., LTD.;DAISANKASEI CO., LTD. |
发明人 |
KIMOTO HISAO;MOCHIZUKI TSUTOMU |
| 分类号 |
C08G61/12;H01B3/30;H01L21/312;H01L21/768;H01L23/522;H01L23/532;(IPC1-7):B32B27/00;H01L23/00 |
主分类号 |
C08G61/12 |
| 代理机构 |
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代理人 |
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| 主权项 |
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