发明名称 |
Semiconductor device and method for producing same |
摘要 |
On the surface of a field oxide film (3 of FIG. 2e) formed-on a substrate region where the effective thickness in the vertical direction of a substrate is diminished due to the presence of a crystal defect (2 of FIG. 1a), the field oxide film is etched by a predetermined thickness until a recess (4 of FIG. 2f) ascribable to the presence of the defect is exposed (step of FIG. 2f). A new oxide film then is formed in an amount corresponding to the above-mentioned thickness on the field oxide film (step of FIG. 3g) to diminish the depth of the recess ascribable to the presence of the defect. To provide a semiconductor device in which leakage between elements can be eliminated with a thin LOCOS oxide film thickness remaining unchanged.
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申请公布号 |
US6291311(B2) |
申请公布日期 |
2001.09.18 |
申请号 |
US20010764055 |
申请日期 |
2001.01.19 |
申请人 |
NEC CORPORATION |
发明人 |
OHASHI TAKUO;KITANO TOMOHISA |
分类号 |
H01L21/76;H01L21/306;H01L21/316;H01L21/762;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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