发明名称 |
Sidewall formation for sidewall patterning of sub 100 nm structures |
摘要 |
In one embodiment, the present invention relates to a method of forming a conductive structure having a width of about 100 nm or less, involving the steps of providing a substrate having a conductive film; patterning a sidewall template over a first portion of the conductive film wherein a second portion of the conductive film is exposed, the sidewall template having at least one sidewall over the conductive film; depositing a sidewall film over the conductive film and the sidewall template, the sidewall film having a vertical portion adjacent the sidewall of the sidewall template and a horizontal portion in areas not adjacent the sidewall of the sidewall template; removing the horizontal portion of the sidewall film exposing a third portion of the conductive film; removing the sidewall template exposing a fourth portion of the conductive film; and etching the third portion and the fourth portion of the conductive film thereby providing the conductive structure having a width of about 100 nm or less underlying the vertical portion of the sidewall film.
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申请公布号 |
US6291137(B1) |
申请公布日期 |
2001.09.18 |
申请号 |
US19990234380 |
申请日期 |
1999.01.20 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
LYONS CHRISTOPHER F.;TEMPLETON MICHAEL K.;EARLY KATHLEEN R. |
分类号 |
H01L21/28;H01L21/3213;H01L21/768;(IPC1-7):G03C5/00;H01L21/31;H01L21/461 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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