| 摘要 |
The invention relates to a method of manufacturing an integrated semiconductor device on a substrate (1), comprising steps to manufacture a stack of layers (2, 3, 4, 5) on the substrate, and steps to manufacture circuit elements by means of photolithography including the formation of a centering mask, the formation of a reference pattern through an opening in this mask, and the formation of masks for defining circuit elements centered on the reference pattern. This method comprises the formation of at least one circuit element (12) provided with electrically insulating means in lateral regions (11), the formation of the centering mask of the masks defining the integrated circuit elements, by means of a first mask defining the lateral insulation regions of this circuit element, and the formation of the reference pattern by the pattern (20) formed by etching, through the first mask, to a depth which does not exceed the thickness of the upper layer (5) of the stack of layers in said lateral insulation regions (11).
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