摘要 |
In one embodiment, the present invention relates to a method of processing a semiconductor structure including a resist thereon, involving contacting the semiconductor structure including the resist with a plasma comprising at least one inert gas selected from the group consisting of nitrogen, helium, neon, argon, krypton and xenon; exposing the semiconductor structure including the resist to actinic radiation having a wavelength of about 160 nm or less through a lithography mask; and developing the resist with a developer.
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