| 摘要 |
PROBLEM TO BE SOLVED: To obtain a film-forming composition capable of forming a silica-based film which is used as an interlayer insulating material in a semiconductor ele ment or the like and is excellent in the dielectric characteristics and the mechani cal strengths. SOLUTION: The film-forming composition contains (A) a condensate obtained by hydrolyzing a silane compound of at least one kind selected from the group consisting of compound expressed by general formulae (1), (2) and (3), in the presence of an alkali compound, and (B) a protonic organic solvent: RaSi(OR1)4-a (1), Si(OR2)4 (2), R3b(R4O)3-bSi-(R7)-Si(OR5)3-cR6c (3) (Wherein, R is a hydrogen atom, a fluorine atom or a monovalent organic group;R1 through R6 are each a monovalent organic group; R7 is an oxygen atom, a phenylene group or a group expressed by -(CH2)n-; a is an integer of 1 to 2; b and c are each a number of 0 to 2; d is 0 or 1; and n is an integer of 1 to 6).
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