| 摘要 |
In a TiSi2 layer formation method in which a Ti layer is formed by a CVD method supplying TiCl4 gas together with a carrier gas at a prescribed temperature onto a Si layer and forming a TiSi2 layer by having the Ti layer react with the Si layer in a self-aligning manner, the TiCl4 gas is supplied at the flow rate proportion of over 0.5% of the total gas flow rate. Or, a halogen type gas such as HCl gas and Cl2 gas is added to the TiCl4 gas by the flow rate proportion of 0.05%~1% of the flow rate of the TiCl4 gas. Or, after the Ti layer film is formed, the TiCl4 gas is supplied for a prescribed length of time without discharging plasma.
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