| 摘要 |
PROBLEM TO BE SOLVED: To produce a silicon epitaxial wafer which is able to exhibit sufficient getting performance from the initial stage of device processes. SOLUTION: The silicon wafer contains nitrogen in a concentration of >=1×1012 atom/cm3 and oxygen in a concentration of 10 to 18×107 atom/cm3. After epitaxial growth treatment, the obtained epitaxial wafer is heat treated in a temperature range of 800 to 1,100 deg.C under a condition which satisfies the formula: t>=33- (T-800)/100}, wherein T is temperature ( deg.C) and t is time (hr). Further, a method of producing such silicon epitaxial wafers is also provided.
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