| 摘要 |
An FET (Field Effect Transistor) includes a substrate. Sequentially formed on the substrate area buffer layer (200 nm thick) formed of a first sphalerite type semiconductor implemented by In0.52Al0.48, a carrier running layer (6 nm thick) formed of a second sphalerite type semiconductor implemented by In0.53Ga0.47As, an InAs carrier running layer (7 nm thick), an AlAs spacer layer (2 nm thick), a spacer layer (2 nm thick) formed of a third sphalerite type semiconductor implemented by In0.52Al0.48As, a carrier supply layer (20 nm thick) formed of a fourth sphalerite type semiconductor implemented by n-In0.52Al0.48As with 3x1018 cm-3 of Si added thereto, a Schottky layer (15 nm thick) formed of a fifth sphalerite type semiconductor implemented by In0.52Al0.48As, and a cap layer (20 nm thick) formed of a sixth sphalerite type semiconductor implemented by n-In0.53Ga0.47As with 1x1019 cm-3 of Si added thereto. After the cap layer has been partly removed by recess etching, electrodes are formed. The InAs layer whose thickness is greater than a critical thickness constitutes an operating layer.
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