| 发明名称 |
Controlled-stress stable metallization for electronic and electromechanical devices |
| 摘要 |
A method of forming a thin film metallization layer having a predetermined residual stress and a predetermined sheet resistance and force measuring devices formed using the methods.
|
| 申请公布号 |
US6291345(B1) |
申请公布日期 |
2001.09.18 |
| 申请号 |
US19990467728 |
申请日期 |
1999.12.20 |
| 申请人 |
HONEYWELL INTERNATIONAL INC. |
发明人 |
GOLECKI ILAN;EAGAN MARGARET |
| 分类号 |
B81B3/00;B81C1/00;G01L1/18;G01P15/08;G01P15/097;G01P15/10;H01L21/285;H01L21/3205;(IPC1-7):H01L21/44 |
主分类号 |
B81B3/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
