发明名称 Feedback control of deposition thickness based on polish planarization
摘要 The present invention is directed to semiconductor processing operations, and, more particularly, to a method and system for adjusting the thickness of process layers based upon the planarization efficiency of polishing operations. In one embodiment, the invention comprises determining the planarization efficiency of polishing operations, and adjusting the manufactured thickness of a process layer based upon the determined planarization efficiency.
申请公布号 US6291253(B1) 申请公布日期 2001.09.18
申请号 US19990378348 申请日期 1999.08.20
申请人 ADVANCED MICRO DEVICES, INC. 发明人 LANSFORD JEREMY;EVANS ALLEN L.
分类号 B24B37/04;B24B49/00;H01L21/316;H01L21/66;(IPC1-7):H01L21/00 主分类号 B24B37/04
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