发明名称 Method and device for controlled cleaving process
摘要 A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of forming a stressed region in a selected manner at a selected depth (20) underneath the surface. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.
申请公布号 US6291313(B1) 申请公布日期 2001.09.18
申请号 US19990313959 申请日期 1999.05.18
申请人 SILICON GENESIS CORPORATION 发明人 HENLEY FRANCOIS J.;CHEUNG NATHAN
分类号 H01L21/22;H01L21/301;H01L21/38;H01L21/425;H01L21/762;(IPC1-7):H01L21/22 主分类号 H01L21/22
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