发明名称 |
Method and device for controlled cleaving process |
摘要 |
A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of forming a stressed region in a selected manner at a selected depth (20) underneath the surface. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.
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申请公布号 |
US6291313(B1) |
申请公布日期 |
2001.09.18 |
申请号 |
US19990313959 |
申请日期 |
1999.05.18 |
申请人 |
SILICON GENESIS CORPORATION |
发明人 |
HENLEY FRANCOIS J.;CHEUNG NATHAN |
分类号 |
H01L21/22;H01L21/301;H01L21/38;H01L21/425;H01L21/762;(IPC1-7):H01L21/22 |
主分类号 |
H01L21/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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