发明名称 |
Method for forming pullback opening above shallow trenc isolation structure |
摘要 |
A method for forming a pullback opening above a shallow trench isolation structure. A patterned mask layer is formed over a substrate. A sacrificial layer is formed on the sidewalls of the mask layer. The exposed portion of the substrate is etched to form a trench in the substrate. The sacrificial layer is removed to increase the width of the opening above the trench.
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申请公布号 |
US6291312(B1) |
申请公布日期 |
2001.09.18 |
申请号 |
US19990395108 |
申请日期 |
1999.09.14 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO, LTD. |
发明人 |
CHAN BOR-WEN;LIU YUAN-HUNG |
分类号 |
H01L21/762;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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