| 摘要 |
This invention provides a semiconductor device such as an MOS transistor and a method of fabricating the same wherein a field oxide film is provided to surround a device region of a semiconductor substrate (including well), providing a gate on the device region via a gate insulating film, forming main doped layers destined to become a source and a drain in the device region of the semiconductor substrate between the gate and the field oxide film on opposite sides of the gate, and providing main active layers (high-concentration diffusion layers) having the impurity diffused and activated therein. Sub-doped layers are formed by selectively adding impurity to regions of the semiconductor substrate at boundaries between the device region and the field oxide film (except in the vicinity of the gate) and sub-active layers having the impurity diffused and activated therein are provided.
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