| 摘要 |
A first cooling unit group and a second cooling unit group are disposed in the vicinity of a resist coating unit group. Each of the first cooling unit group and the second cooling unit group is composed of various cooling units. Each of the cooling units cools a wafer. A first heating unit group and a second heating unit group are disposed in the vicinity of a developing unit group. Each of the first heating unit group and the second heating unit group is composed of various heating units. Each of the heating units heats a wafer. A first conveying unit is disposed between the cooling unit groups. A second conveying unit is disposed between the heating unit groups. A transfer table is disposed between the conveying units. The transfer table temporarily holds a wafer. The first conveying unit conveys a wafer among the resist coating unit group, the transfer table, and the cooling unit groups. Thus, even if as the size of a substrate becomes large and thereby large heating unit groups are required, the film thickness of a resist film coated on a substrate can be suppressed from varying against heat generated from the heating unit groups.
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