| 摘要 |
The present invention provides polymeric materials that can be used as a moisture/ion barrier layer for inhibiting the penetration of moisture and/or ions for coming into contact with the metal wiring found in chip level interconnects. The present invention also provides a means to protect the chip backside from being contaminated by metal atoms or metal ions which are capable of forming mobile silicides, which can migrate to the active sites of the semiconductor and destroy them. The present invention further provides methods of forming such polymeric barrier layers on at least one surface of an interconnect structure. |
