发明名称 |
INDIRECTLY HEATED CATHODE STRUCTURE |
摘要 |
PURPOSE: An indirectly heated cathode structure is provided to control the amount of electron beam in an accurate manner by preventing leakage current between the heater and metal base. CONSTITUTION: An indirectly heated cathode structure comprises an electron emitting member(21) for emitting thermal electrons when heated; a metal base(22) having a fixed portion(22a) where the electron emitting member is mounted, and a skirt portion(22b) extended downward from an edge of the fixed portion; a heater(23) mounted inside of the metal base; and an insulation layer(24) having a lower insulation layer(24a) constituted by a P-type semiconductor coated at the outer periphery of the heater, and an upper insulation layer(24b) constituted by an N-type semiconductor coated at the outer periphery of the lower insulation layer. Thus-configured indirectly heated cathode is capable of preventing current leakage between the heater and the cathode even at a high temperature of 1000°C or higher.
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申请公布号 |
KR20010086854(A) |
申请公布日期 |
2001.09.15 |
申请号 |
KR20000010777 |
申请日期 |
2000.03.03 |
申请人 |
SAMSUNG SDI CO., LTD. |
发明人 |
KIM, WAN;MUN, SEONG HWAN;SEO, DONG GYUN |
分类号 |
H01J1/13;(IPC1-7):H01J1/13 |
主分类号 |
H01J1/13 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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