| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming contact holes in a semiconductor device that can enhance process yield by preventing damage to the field oxide film. SOLUTION: Gate electrodes 118a, 118b each having a first and a second spacer 124, 132 are formed on an active region of a semiconductor substrate 100. The outermost spacer is removed for keeping spaces for forming contact holes on the semiconductor substrate 100. An etch preventing film and an interlayer insulating layer are formed on the semiconductor substrate 100, and the interlayer insulating layer and the etch preventing film are etched in such a way that a surface area of the semiconductor substrate 100 located between the gate electrodes 118a and 118b, and surface areas of the semiconductor substrate 100 located between the sides of the gate electrodes 118a, 118b that are adjacent to the field region and parts of the field region, are exposed. A borderless contact process and a self-aligned contact process are simultaneously carried out by assuring an adequate width between the gate electrodes 118a and 118b and by forming contact holes after forming the etch preventing film.
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