| 摘要 |
PROBLEM TO BE SOLVED: To simplify a method of manufacturing an image sensor having a capacitor structure. SOLUTION: The image sensor is composed of many unit pixels, each unit pixel comprises a photoelectric element 212 for sensing a light of incidence to generate photo charges, a transistor 210 comprising a gate dielectric 205 formed adjacent to the photoelectric element, and a gate electrode 207 formed on the top of the gate dielectric, an insulation film 231 formed on a specified part of the photoelectric element, and a lower electrode 233. The sensor comprises a capacitor structure 230 wherein the insulation film and the gate dielectric are made of the same material and the lower electrode and the gate electrode are made of the same material.
|
