发明名称 SCREENING METHOD FOR NON-VOLATILE SEMICONDUCTOR MEMORY AND ITS DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a method and a device which can perform screening simply and quickly without requiring special technology. SOLUTION: In this screening method for a non-volatile semiconductor memory, an initial erasing time tei in which written data is erased in an initial state is measured, it is compared with a set erasing time tes previously set, and pass/fail is discriminated. A set erasing time is set based on the following relation. That is, plural memory chips are sampled, write-in voltage from a write-in voltage generating circuit 3 and erasing voltage from an erasing voltage generating circuit 4 are repeatedly applied to plural memory chips 2, the number of times of being erasable Nf immediately before disablement of erasion is measured and relation between the initial erasing time and the number of times of being erasable is grasped.</p>
申请公布号 JP2001250396(A) 申请公布日期 2001.09.14
申请号 JP20000059809 申请日期 2000.03.06
申请人 YASKAWA ELECTRIC CORP 发明人 ISHIDA YUJI;KAKO HISAYUKI;ASANO TANEMASA
分类号 G01R31/28;G11C17/00;G11C29/00;G11C29/56;H01L21/66;(IPC1-7):G11C29/00 主分类号 G01R31/28
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