RAW MATERIAL FOR CHEMICAL VAPOR PHASE GROWTH AND METALLIC OXIDE THIN FILM USING SAME

摘要

PROBLEM TO BE SOLVED: To provide a raw material for CVD having stability suitable not only to the production of respective oxides as to niobium and tantalum but also to the production of multiple metallic oxides, to provide a metallic oxide thin film using the same raw material and to provide its producing method. SOLUTION: This raw material for chemical vapor phase growth is composed of a metallic compound expressed by the following general formula (I) wherein, R1 is a 1 to 8C alkyl group which may be substituted by a halogen atom and may contain oxygen atoms in the chains; R2 is a 1 to 5C alkyl group which may be substituted by a halogen atom; R3 is a 2 to 18C alkylene group which may be branched; (n) is 1 or 3; (m) is an integer in which (n+2m) is 5; and M is a niobium atom or a tantalum atom}.