发明名称 RESIN-SEALED SEMICONDUCTOR DEVICE FOR POWER
摘要 PROBLEM TO BE SOLVED: To provide a resin-sealed semiconductor device for power that can effectively dissipate heat that is generated by a power semiconductor device as in the conventional cases, can improve noise withstand and at the same time can have higher functions. SOLUTION: The plate thickness of a die pad 19 and that of a lead part 2 are set equally so that they are made as thick as possible. On a plurality of inner leads 2AS for support in a first inner lead 2A1 that are positioned at the upper part of the die pad 19, a thick-film substrate 8 is joined via a junction layer 20. On the upper surface of the substrate 8, the entire pattern for control circuits of a power semiconductor device 1 is formed as a thick film pattern 10. On the pattern 10, an element (IC) 9 for control circuits and entire electronic components 12 are mounted via solder. Then, each of parts 9, 12, 10, 8, 1, 2A1, 19 and 2B1 is sealed by a sealing resin 5.
申请公布号 JP2001250911(A) 申请公布日期 2001.09.14
申请号 JP20000062220 申请日期 2000.03.07
申请人 MITSUBISHI ELECTRIC CORP 发明人 YOSHIDA TAKANOBU;SHINOHARA TOSHIAKI;KAWATO HISASHI
分类号 H01L23/28;H01L21/60;H01L23/34;H01L23/495;H01L23/50;H01L25/07;H01L25/16;H01L25/18 主分类号 H01L23/28
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