| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain an abrasive composition which allows the abrasion of copper and a tantalum-containing compound to the same extent at a high abrasion speed in CMP processing process in the preparation of a semiconductor device containing a copper film and a tantalum-containing compound, shows a high selectivity and is suitably used for first abrasion or second abrasion. SOLUTION: This abrasive composition comprises an abrasive, an anticorrosive, an oxidizing agent, an acid, a pH adjustor and water, has a pH within the range of from 2 to 5 and contains a colloidal silica or a fumed silica as the abrasive. Here, the primary particle size of the abrasive is <=20 nm.</p> |
