| 摘要 |
PROBLEM TO BE SOLVED: To provide an IGBT having a high load short-circuit resistance with a low ON-voltage maintained. SOLUTION: The semiconductor element comprises an n-base layer 1, p-base layers 7, 11 selectively formed on one surface of the n-base layer 1, n-emitter layer 8 formed selectively on the p-base layer surface, gate electrode 6 provided through a gate insulation film 5 on the p-base layer between the n-emitter layer and the n-base layer, collector layer 3 formed on the other surface of the n-base layer, collector electrode 9 provided on the collector layer, and emitter electrode 10 provided on both the n-emitter layer and the p-base layer. A p-type impurity concentration distribution in channel regions of the p-base layers 7, 11 has peak concentrations at positions nearer to the n-base layer than the junction between the n-emitter layer and the p-base layer.
|
