| 摘要 |
PROBLEM TO BE SOLVED: To insure sufficient oscillation frequencies in the low voltage region of a ring oscillation circuit, to also suppress the rise of the oscillation frequency in a high voltage region and to reduce current consumption in a MOS semiconductor integrated circuit device. SOLUTION: This device has a first constant voltage generation circuit 2a consisting of a P type MOS enhancement transistor 21 and an N type MOS depression transistor 22 and a second constant voltage generation circuit 2b consisting of an N type MOS depression transistor 23 and an N type MOS enhancement transistor 24. A first constant voltage generated by the first constant voltage generation circuit is applied to the gate electrode of the P type MOS transistor of a transmission gate 26 connected between inverter circuits constituting a ring oscillation circuit, and a second constant voltage generated by the second constant voltage generation circuit is applied to the gate electrode of the N type MOS transistor of the gate 26. Electronic equipment composed of an EEPROM that is small-sized and has a long life can be realized by using such a ring oscillation circuit.
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