| 摘要 |
PROBLEM TO BE SOLVED: To sufficiently recover deterioration in the characteristics of a transistor by heat treatment without deteriorating the characteristics of a capacitor in a semiconductor device including the capacitor using a ferroelectric and a ferroelectric film. SOLUTION: On an insulating film on a supporting substrate where a semiconductor integrated circuit is created, a capacitor that is composed of a lower electrode, a capacity insulating film, and an upper electrode is formed, a protection film is formed in the upper layer of the capacitor, at least the protection film at a part corresponding to the upper part of the capacitor is removed, heat treatment is made to the semiconductor integrated circuit and capacitor after the removal and at the same time before metal wiring that is provided on the protection film is formed, and the metal wiring is formed. |
