| 摘要 |
<p>PROBLEM TO BE SOLVED: To lower a photo regeneration rate and increase an alignment accuracy in a lithography process by introducing a process of forming a protective film such as an insulation film for an alignment mark to prevent an alignment deviation in the lithography process in addition to the conventional manufacturing processes and manufacture a semiconductor optical device with a high yield as instructed by design specification and also provide a method of manufacturing the same. SOLUTION: By protecting the alignment mark section by the protective film such as an insulation film as shown in Figure 4E, an influence by crystal growth (buried growth) or etching which can be a cause for the damage of the alignment mark can be prevented. Thereby, the photo regeneration rate can be reduced to 0% and a±0.5μm alignment accuracy can be achieved. Furthermore, a semiconductor optical device can be manufactured as instructed by design specification.</p> |
