| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a ferroelectric memory having a function to prohibit rewriting of data in a specific region. SOLUTION: This device is provided with a memory cell array 1 in which memory cells having ferroelectric capacitors are arranged and which are divided into plural blocks BLKi, decoding circuits 9, 10, 11 selecting memory cells, bit line sense amplifier circuits 2 connected to bit lines of the memory cell array 1, data input/output buffers 6, 7 controlling data transfer between the bit line sense amplifier circuit 2 and a data input/output terminal I/O, and a protecting circuit 12 prohibiting rewriting by designating a specific block of the memory cell array 1 and making data transfer to the block 'off'.</p> |
