| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for controlling the precision removal of an unnecessary material from a substrate capable of transmitting light for the separation and removal of a defect from the surface of the substrate, for direct writing in a reticle or photomask and for the resulting reticle or photomask. SOLUTION: The depth of a material removed from a substrate capable of transmitting light is controlled in accordance with the depth of ion implantation of a light absorbing material such as gallium, arsenic, boron, phosphorus, antimony or a compound of these into a defect on the substrate and/or a region surrounding the defect. Contrary to expectation, precision removal is enabled while preventing thermal damage to the substrate when an unnecessary material is removed using laser peeling under pulses of <10-15 sec.</p> |
