MAGNETO-RESISTIVE ELEMENT

摘要

PROBLEM TO BE SOLVED: To make a first ferromagnetic layer a single magnetic domain structure to prevent the generation of a magnetic wall. SOLUTION: A bias layer 4 is formed at both end parts of a TMR thin film 3 by using a hard magnetic material having a high resistance value. Therefore, a shunt of a sense current to the bias layer 4 is eliminated and a bias magnetic field can be sufficiently applied to the TMR thin film 3. Thereby, a free layer 13 is made the magnetic domain and the generation of the magnetic wall can be prevented.