| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic random access memory device capable of write-in at low current and having an enhanced magnetic resistance change ratio. SOLUTION: In the magnetic random access memory device consisting of a memory cell array in which either an insulating material film 3 or a conductive material film is interposed between a first ferromagnetic material layer 1 whose magnetization direction is fixed and a second ferromagnetic material layer 2 whose magnetization direction is rotatable, only the first ferromagnetic material layer 1 whose magnetization direction is fixed is composed of a ferromagnetic material having a spin polarizing ratio of >=0.9.
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