SEMICONDUCTOR DEVICE AND PROCESS FOR FORMING CONDUCTIVE STRUCTURE

摘要

PROBLEM TO BE SOLVED: To realize a semiconductor device and a conductive structure having high reliability and performance. SOLUTION: The semiconductor device and the conductive structure are formed while having a metal layer. In one embodiment, the semiconductor device comprises an amorphous metal layer 22 and a crystal metal layer 42. The amorphous metal layer 22 reduces the possibility that contaminants permeate through the amorphous metal layer 22. In order to keep relatively low resistivity, a more conducive crystal metal layer 42 may be formed on the amorphous metal layer 22. When the conductive structure is formed, a precursor substance containing a metal and a scavenger gas flow simultaneously at least momentarily. The conductive structure may be a part of the gate electrode.