| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can cope with miniaturization and narrow pitch and can be manufactured in a stable process. SOLUTION: A first wiring substrate 40 has a semiconductor element 50, a connection land 43 and a connection land (first connection part) 44; whereas a second wiring substrate 40 has a semiconductor element 50, a connection land (second connection part) 43 and a connection land 44. The connection land (first connection portion) 44 is positioned as opposed to the connection land (second connection portion) 43, the connection land (second connection portion) 43 is formed as a region smaller than the connection land (first connection portion) 44, and a total thickness of the connection lands (first and second connection portions) 44 and 43 is dimensioned so that a predetermined interval is provided between the element 50 and substrate 40. |
