| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for fabricating a semiconductor integrated circuit device having a high melting point metal interconnection of tungsten, or the like, in which good contact characteristics can be ensured between the interconnection and a silicon substrate. SOLUTION: A titanium film 101 is formed in a contact hole 22 exposing a desired part of a semiconductor substrate 1 and after a titanium silicide film 102 is formed in that region by heat treatment, a TiN film (barrier metal film) 104 is formed and the contact hole is filled with a high melting point metal 105. The titanium film 101 is a TiNx (x<1) film. The process for forming the titanium silicide film 102 is performed under a nitrogen atmosphere. Surface of the TiN film is nitrided 103 prior to formation of the TiN film (barrier metal film) 104. |
