发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 <p>PROBLEM TO BE SOLVED: To solve a problem in a conventional liquid crystal display device that at least five or more photomasks are used to form a TFT, resulting in a high cost. SOLUTION: A pixel electrode 119, a source region 117 and a drain region 116 are formed by using a third photomask. Consequently, in a third photolithography process, a liquid crystal display device having a pixel TFT section including a reverse stagger type n-channel type TFT and a storage capacitor can be achieved.</p>
申请公布号 JP2001250953(A) 申请公布日期 2001.09.14
申请号 JP20000061297 申请日期 2000.03.06
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 YAMAZAKI SHUNPEI;KOYAMA JUN;NAKAJIMA SETSUO
分类号 G02F1/136;G02F1/1368;G09F9/30;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/786;(IPC1-7):H01L29/786 主分类号 G02F1/136
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