发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
<p>PROBLEM TO BE SOLVED: To solve a problem in a conventional liquid crystal display device that at least five or more photomasks are used to form a TFT, resulting in a high cost. SOLUTION: A pixel electrode 119, a source region 117 and a drain region 116 are formed by using a third photomask. Consequently, in a third photolithography process, a liquid crystal display device having a pixel TFT section including a reverse stagger type n-channel type TFT and a storage capacitor can be achieved.</p> |
申请公布号 |
JP2001250953(A) |
申请公布日期 |
2001.09.14 |
申请号 |
JP20000061297 |
申请日期 |
2000.03.06 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
YAMAZAKI SHUNPEI;KOYAMA JUN;NAKAJIMA SETSUO |
分类号 |
G02F1/136;G02F1/1368;G09F9/30;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/786;(IPC1-7):H01L29/786 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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