| 摘要 |
<p>PROBLEM TO BE SOLVED: To perform a laser treatment of a large area semiconductor coating with high throughput while suppressing variation in the characteristics among a plurality of semiconductor elements formed by laser annealing. SOLUTION: First and second adjacent element forming regions are formed on a substrate, the first element forming region is scanned along a first scanning path by a laser beam having linear cross-section, and the second element forming region is scanned along a second scanning path by a laser beam having linear cross-section, thus dividing the substrate into a first element substrate having the first element forming region and a second element substrate having the second element forming region. In such a laser treating method, the substrate is divided such that a region irradiated with both laser beams along the first and second scanning paths is located on the outside of the element substrates.</p> |
