发明名称 APPARATUS FOR TREATING SEMICONDUCTOR WAFER
摘要 <p>PROBLEM TO BE SOLVED: To solve the problem in a heat treatment system, that first and second housing parts provided for avoiding uneven transfer of heat are difficult to be enclosed appropriately. SOLUTION: An apparatus for treating a wafer manufactured from a semiconductor material, the apparatus comprising a first and second housing parts 2 arranged for movement away from and toward each other, the two housing parts bounding a treatment chamber 3, while around the treatment chamber there is provided a first groove 8 connected to gas discharge means, while in at least one of the two boundary surfaces 5 there is provided a second groove 12 connected to the gas feed means, the first groove located radially within the second groove, and, in use, the pressure created by the gas feed means being such that from the second groove, gas flows both in radial inward and in radial outward direction in the gap between the first and second boundary surface.</p>
申请公布号 JP2001250788(A) 申请公布日期 2001.09.14
申请号 JP20000390887 申请日期 2000.12.22
申请人 ASM INTERNATL NV 发明人 SNIJDERS GERT-JAN;KUZNETSOV VLADIMIR IVANOVICH;DE RIDDER CHRISTIANUS GERARDUS MARIA;TERHORST HERBERT
分类号 H01L21/00;H01L21/26;H01L21/683;(IPC1-7):H01L21/26;H01L21/68 主分类号 H01L21/00
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