发明名称 |
ETCHANT, ETCHING METHOD, AND SEMICONDUCTOR SILICON WAFER |
摘要 |
PROBLEM TO BE SOLVED: To provide an etchant and an etching method which help prevent metal contamination of a semiconductor silicon wafer and a semiconductor silicon wafer which is least contaminated with metal. SOLUTION: This etchant is prepared by dipping a stainless steel into an alkaline water solution for ten or more hours, and a semiconductor silicon wafer undergoes etching by using this etchant in this etching method. By this setup, a semiconductor silicon wafer which is least contaminated by metal can be obtained.
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申请公布号 |
JP2001250807(A) |
申请公布日期 |
2001.09.14 |
申请号 |
JP20000385497 |
申请日期 |
2000.12.19 |
申请人 |
SHIN ETSU HANDOTAI CO LTD;NAGANO DENSHI KOGYO KK |
发明人 |
MIYAZAKI SEIICHI |
分类号 |
C30B29/06;C30B33/08;H01L21/306;(IPC1-7):H01L21/306 |
主分类号 |
C30B29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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