发明名称 ETCHANT, ETCHING METHOD, AND SEMICONDUCTOR SILICON WAFER
摘要 PROBLEM TO BE SOLVED: To provide an etchant and an etching method which help prevent metal contamination of a semiconductor silicon wafer and a semiconductor silicon wafer which is least contaminated with metal. SOLUTION: This etchant is prepared by dipping a stainless steel into an alkaline water solution for ten or more hours, and a semiconductor silicon wafer undergoes etching by using this etchant in this etching method. By this setup, a semiconductor silicon wafer which is least contaminated by metal can be obtained.
申请公布号 JP2001250807(A) 申请公布日期 2001.09.14
申请号 JP20000385497 申请日期 2000.12.19
申请人 SHIN ETSU HANDOTAI CO LTD;NAGANO DENSHI KOGYO KK 发明人 MIYAZAKI SEIICHI
分类号 C30B29/06;C30B33/08;H01L21/306;(IPC1-7):H01L21/306 主分类号 C30B29/06
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