| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a semiconductor device having a multilayer wiring structure without peeling of an interlayer film and of metal wiring and with an easy and simple process. SOLUTION: The semiconductor device 8 contains a lower layer metal wiring 2 formed on a base film 1, an organic interlayer film 4 composed of an insulating material formed on the base film 1 and on the lower layer metal wiring 2, an upper layer metal wiring 7 formed on the organic interlayer film 4, contact metal members 12 that are connected to the lower layer metal wiring 2 piercing the organic interlayer film 4. The adhesion between the metal wiring and the interlayer film is enhanced by inserting a first insulating film 10 between the lower layer metal film 2 and the organic interlayer film 4 and a second insulating film 14 between the upper layer metal wiring 7 and the organic interlayer film 4. Forming the first insulating film 10 with a material that can be etched selectively against the second insulating film 14 makes the mask of photo-resist unnecessary in removing the first insulating film 10 in through holes 11 on the lower layer metal wiring 2.
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